Plasma processing apparatus and plasma processing method

ABSTRACT

Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. 
     A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.

CLAIM OF PRIORITY

The present application claims of priority from Japanese patentapplication JP 2011-076585 filed on Mar. 30, 2011, the content of whichis hereby incorporated by reference into this application.

FIELD OF THE INVENTION

The present invention relates to a plasma processing apparatus and aplasma processing method, and more particularly, to a plasma processingapparatus and a plasma processing method suitable for etching a minutepattern with high precision by using plasma in order to processmaterials such as a semiconductor device, and the like.

BACKGROUND OF THE INVENTION

In the related art, as a method of processing the surface of asemiconductor device, an apparatus of etching the semiconductor deviceby using plasma is widely known. Herein, the related art will bedescribed by using an electron cyclotron resonance (hereinafter,referred to as ‘ECR’) type plasma etching apparatus as an example. Inthis ECR type, the plasma is generated by microwaves in a vacuum vesselapplying a magnetic field from the outside. Electrons perform cyclotronmotion by the magnetic field and the plasma can be efficiently generatedby resonating a frequency of the magnetic field and a frequency of themicrowaves. In order to accelerate ions incident in the semiconductordevice, radio-frequency power is applied to a sample as sequentialwaveforms substantially in a sinusoidal waveform. Herein, theradio-frequency power applied to the sample is, hereinafter, referred toas a radio-frequency bias. Further, as gas forming plasma, halogen gassuch as chlorine or fluorine is widely used.

Radical or ions generated by the plasma react with an etched material,such that etching is performed.

A reaction product generated by etching causes reattachment to a patternand an etching shape thereof is tapered. Therefore, in order to achievehigh precision etching, control of the reaction product generated duringetching becomes important. A method of shortening a stay time of thereaction product is used in order to reduce the concentration of thereaction product. When a stay time of gas in a plasma processing chamberis set as τ, in the case where P is a processing pressure, V is thecapacity of the plasma processing chamber, and Q is a gas flow, τ has arelationship of τ=PV/Q and in apparatus configuration, the limitationsof the P, V, and Q are defined. The stay time of the gaseous reactionproduct may be shortened by lowering a processing pressure or increasingthe gas flow on the basis of the relationship, but it is difficult toenhance the increase of the gas flow and the lowering of the processingpressure in a trade-off relationship.

Further, in Japanese Patent Application Laid-Open Publication No. Hei8(1996)-250479, as a method of controlling the reaction product andincreasing etching precision, temporal modulation of the plasma orradio-frequency bias is disclosed. In addition, In Japanese PatentApplication Laid-Open Publication No. 2001-85395, the method ofcontrolling the temporally modulated radio-frequency bias in which ionenergy is with high precision controlled by dividing the radio-frequencybias into two or more is disclosed.

SUMMARY OF THE INVENTION

Parameters controlling temporal modulation of radio-frequency bias powerinclude a repetition frequency and a ratio of an on time to one cycle(hereinafter, referred to as a duty ratio). At the time of performingetching, the repetition frequency, the duty ratio, and etchingconditions such as etching gas a pressure, or the like are set in acontrol unit by an input section. The set value is handled as a digitalsignal in the control unit, but in the case where the control unit andthe radio-frequency bias power supply are connected to each other by ananalog method, the digital signal is converted into an analog signal bya digital/analog converter (hereinafter, referred to as a D/A converter)in the control unit and thereafter, transmitted. At the time oftransmitting the analog signal, when an error occurs in noise for thesignal, an output value varies with respect to the set value. Forexample, in the case where signals of 0 to 2000 Hz can be inputted bythe unit of 1 Hz, resolution of approximately 0.98 Hz per 1 digit ismade in digital signal processing of 12 bits. Herein, the digit means abinary digit number. As shown in FIG. 11, in the digital signalprocessing of 12 bits, when the analog signal is used as ±10 V, voltageper 1 digit is approximately 4.9 mV. When the analog signal deviates 4.9mV or more due to noise, distortion of 1 digit or more may occur afterconversion to the digital signal. In this case, since the resolution isapproximately 0.98 Hz (approximately 1 Hz) per 1 digit, an error of 1 Hzor more may occur.

For example, when the repetition frequency is 10 Hz and the duty ratiois 10%, an off time of the radio-frequency bias is 90 ms. When therepetition frequency is 11 Hz and the duty ratio is 10%, the off time is81.8 ms. In the case where an error of control precision is ±1 Hz,consequently, 10 Hz may be 11 Hz. In this case, an error of the off timeis 8.2 ms. The reaction product is exhausted during the off time, butthe stay time of the reaction product in general plasma etching is inthe range of 50 to 500 ms, such that the error of 8.2 ms of the off timeof the radio-frequency bias has a large influence on the stay time ofthe reaction product and affects precision in shape control. Further,when the repetition frequency is 1000 Hz and the duty ratio is 10%, theoff time is 0.9 ms, but an error occurs due to noise and even in thecase of a signal processing of 1001 Hz, the off time is 0.899 ms and theerror is 0.001 ms. Therefore, an error of 0.1% just occurs. That is, inthe case where the repetition frequency is low, the control precision orresolution of the signal needs to increase, but in the case where therepetition frequency is high, even the low frequency resolution has asmall influence. As a result, in order to improve controllability ofetching shape processing, the concentration of the reaction productionneeds to be controlled with high precision by improving the resolutionof a low-frequency band of the repetition frequency.

Although the resolution can be increased by narrowing a used repetitionfrequency domain, an appropriate repetition frequency varies dependingon etching gas or an etched target structure. As a result, in order tocope with a variety of gases or various etched target structure, arepetition frequency having a wide frequency band as possible isrequired. Therefore, it is difficult to achieve both widening of ausable domain of the repetition frequency and improving of the frequencyresolution.

Further, pulse plasma known as a method of controlling dissociation ofplasma can also be described similarly as the object. A radio-frequencyapplied to generate pulse plasma is temporally modulated to be pulsed,but even in this control, the frequency resolution needs to increase inorder to achieve high-precision control.

The present invention has been made in an effort to provide a plasmaprocessing apparatus with a radio-frequency power supply supplyingtemporally modulated intermittent radio-frequency power which can becontrolled with high precision in a broad repetition frequency band anda plasma processing method using the plasma processing apparatus.

According to an embodiment of the present invention, there is provided aplasma processing apparatus including: a vacuum vessel; a firstradio-frequency power supply for generating plasma in the vacuum vessel;a stage installed in the vacuum vessel and mounted with a sample; and asecond radio-frequency applying voltage to the stage, wherein at leastone of the first and second radio-frequency power supplies supplytemporally modulated intermittent radio-frequency power, has two or moredifferent frequency bands, and temporally modulates the radio-frequencypower by a repetition frequency which has the same range of analogsignals used in each of the frequency band.

According to another embodiment of the present invention, there isprovided a plasma processing apparatus including: a vacuum vessel; aplasma generating section plasma in the vacuum vessel; a stage installedin the vacuum vessel and mounted with a sample; and a radio-frequencypower supply applying temporally modulated intermittent radio-frequencypower to the stage, wherein the radio-frequency power supply has two ormore different frequency bands and temporally modulates theradio-frequency power by a repetition frequency which has the same rangeof analog signals used in each of the frequency bands.

According to yet another embodiment of the present invention, there isprovided a plasma processing method using a plasma processing apparatusincluding a vacuum vessel, a plasma generating section plasma in thevacuum vessel, a stage installed in the vacuum vessel and mounted with asample, and a radio-frequency power supply applying temporally modulatedintermittent radio-frequency power to the stage, wherein theradio-frequency power supply has two or more different frequency bandsand temporally modulates the radio-frequency power by a repetitionfrequency which has the same range of analog signals used in each of thefrequency bands, and the sample is etched while applying the temporallymodulated intermittent radio-frequency power at any one frequency of thefrequency bands.

According to the embodiments of the present invention, it is possible tosupply temporally modulated intermittent radio-frequency power which canbe controlled with high precision in a broad repetition frequency bandfrom at least one power supply of radio-frequency power supplygenerating plasma and a radio-frequency power supply applying voltage toa stage.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a longitudinal cross-sectional view of a microwave ECR plasmaetching apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a control unit and a radio-frequencybias power supply according to an embodiment of the present invention;

FIG. 3 is a diagram showing transmission of an analog signal;

FIG. 4 is a schematic diagram of an A/D converter.

FIG. 5 is a schematic diagram of a control unit and a radio-frequencybias power supply according to an embodiment of the present invention;

FIG. 6 is a diagram showing a setting example of a channel;

FIGS. 7A and 7B are a diagram showing temporal dependence of theconcentration of a reaction product on an etching time;

FIGS. 8A and 8B are a diagram showing dependence of a taper angle of anetching shape on an off time of a repetition frequency or temporallymodulated intermittent radio-frequency bias power;

FIG. 9 is a schematic diagram of a control unit and a radio-frequencypower supply according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of a control unit and a radio-frequencybias power supply according to an embodiment of the present invention;and

FIG. 11 is a diagram showing a setting example of an analog signal inthe related art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings. FIG. 1 is a schematiclongitudinal cross-sectional view of an ECR plasma etching apparatususing microwaves according to an embodiment of the present invention.Further, like reference numerals refer to like elements.

A shower plate 102 (e.g., quartz) for injecting etching gas into avacuum vessel 101 and a dielectric window 103 (e.g., quartz) areinstalled in an upper part of the vacuum vessel 101 with the upper partopened and sealed to form a processing chamber 104. A gas supplyingdevice 105 for inflow of the etching gas is connected to the showerplate 102. Further, a vacuum exhaust device 106 is connected to thevacuum vessel 101 through an exhaust opening-closing valve 117 and anexhaust velocity variable valve 118. The vacuum exhaust device 106 isdriven by opening the exhaust opening-closing valve 117 to lower apressure in the processing chamber 104, which becomes a vacuum state.The pressure in the processing chamber 104 is adjusted to a desiredpressure by the exhaust velocity variable valve 118. The etching gasflows into the processing chamber 104 from the gas supplying device 105through the shower plate 102 and exhausted by the vacuum exhaust device106 through the exhaust velocity variable valve 118. Further, a samplemounting electrode 111 which is a stage is installed in a lower part ofthe vacuum vessel 101 to face the shower plate 102.

In order to transmit power for generating plasma to the processingchamber 104, a waveguide 107 for transmitting electromagnetic waves isinstalled above the dielectric window 103. The electromagnetic wavestransmitted to the waveguide 107 oscillate in an electromagnetic wavegenerating power supply 109. Meanwhile, an effect of the embodiment isnot particularly limited to a frequency of the electromagnetic waves,but in the embodiment, a 2.45 GHz microwave is used. A magnetic fieldgenerating coil 110 for forming a magnetic field is installed outsidethe processing chamber 104 and the electromagnetic waves oscillated inthe electromagnetic wave generating power supply 109 generateshigh-density plasma in the processing chamber 104 by interaction withthe magnetic field formed by the magnetic field generating coil 110 anda wafer 112 which is a sample disposed on the sample mounting electrode111 is etched. Since the shower plate 102, the sample mounting electrode111, the magnetic field generating coil 110, the exhaust opening-closingvalve 117, the exhaust velocity variable valve 118, and the wafer 112are coaxially disposed on a central axis of the processing chamber 104,the flow of the etching gas or radical and ions generated by plasma andthe reaction product generated by etching are coaxially injected intothe wafer 112 and exhausted. The coaxial placement causes an etchingrate and wafer in-plane uniformity to be close to axial symmetry andwafer processing uniformity to be improved. The surface of the samplemounting electrode 111 is coated with a sprayed film (not shown) andconnected to a DC power supply 116 through a radio-frequency filter 115.Moreover, the radio-frequency bias power supply 114 is connected to thesample mounting electrode 111 through a matching circuit 113. Theradio-frequency bias power supply 114 may selectively supply temporallymodulated intermittent radio-frequency power or continuousradio-frequency power to the sample mounting electrode 111 with aradio-frequency bias output unit 126 and a pulse generator 108 (see FIG.2). Further, the temporally modulated intermittent radio-frequency biaspower is controlled by a repetition frequency which is the number oftimes at which a period (on period) to apply the radio-frequency biaspower and a period (off period) not to apply the radio-frequency biaspower are repeated per unit time and a duty ratio which is an on periodper one cycle (the reciprocal of the repetition frequency).

A control unit 120 controlling etching using the ECR etching apparatusincludes a PC 121 processing etching parameters such as the repetitionfrequency, the duty ratio, the amount of etched gas, a processingpressure, microwave power, coil current, and the like which are inputtedby an input section (not shown), a microcomputer 122 performing signalprocessing, and a digital/analog converter (hereinafter, referred to asa D/A converter 123) converting a digital signal into an analog signal(see FIG. 2).

Further, the radio-frequency bias power supply 114 includes an analog todigital converter (hereinafter, referred to as an ‘A/D converter’) 124converting the analog signal into the digital signal, a signalprocessing unit 125 processing a signal transmitted from themicrocomputer 122 and a signal transmitted from the A/D converter 124, apulse generator 108 generating pulse waveforms of the repetitionfrequency and the duty ratio indicated from the signal processing unit125, and a radio-frequency bias output unit 126 outputting theradio-frequency bias indicated by the signal processing unit (see FIG.2).

Hereinafter, a function of the control unit 120 in the case of supplyingthe temporally modulated intermittent radio-frequency power to thesample mounting electrode from the radio-frequency bias power supply 114will be described with reference to FIG. 2.

By the input section (not shown), the repetition frequency and the dutyratio inputted into the PC 121 are processed by the microcomputer 122 asthe digital signals, converted into the analog signals through the D/Aconverter 123, and transmitted to the radio-frequency bias power supply114. The analog signal received by the radio-frequency bias power supply114 is converted into the digital signal by the A/D converter 124 andprocessed by the signal processing unit 125, such that theradio-frequency bias power and the pulse waveform are outputted from theradio-frequency bias output unit 126 and the pulse generator 108,respectively. The outputted pulse waveform is overlapped with theoutputted radio-frequency bias power, such that the temporally modulatedintermittent radio-frequency power is supplied from the sample mountingelectrode 111 from the radio-frequency bias power supply 114.

Next, in the case of the repetition frequency of the radio-frequencybias power supply 114, a case in which the range of 1 to 2000 Hz is usedby the unit of 1 Hz, in particular, a frequency band of 1 to 119 Hz iscontrolled at high resolution will be described.

The frequency band of 1 to 119 Hz is set as channel 1 and the frequencyband of 120 to 2000 Hz is set as channel 2. Further, the D/A converter123 and the A/D converter 124 of 12 bits are used and a voltage value ofthe analog signal is in the range of ±10 V. Meanwhile, in the case wherethe analog signal is in the range of ±10 V, the analog signal in therange of 0 to 10 V is generally used.

For example, when the repetition frequency of 60 Hz is inputted into thePC 121, both the signals of channel 1 and channel 2 are periodicallytransmitted to the A/D converter 124 from the microcomputer 122 throughthe D/A converter 123 with different times as shown in FIG. 3. Thesignal processing unit 125 synchronizes signal reception with timing A(channel 1) in accordance with a channel switching signal for selectingchannel 1 transmitted from the microcomputer 122 to select the signal ofchannel 1 from the signals of channel 1 and channel 2 transmitted fromthe A/D converter 124. The signal processing unit 125 selecting thesignal of channel 1 generates a pulse waveform of 60 Hz from the pulsegenerator 108 to output the temporally modulated intermittentradio-frequency power of the repetition frequency of 60 Hz from theradio-frequency bias power supply 114.

Further, as another method of channel selection of the signal processingunit 125, in the case where plural input/output terminals (hereinafter,referred to as ports) are provided in the A/D converter 124 as shown inFIG. 4, a method judging whether any channel is selected by the channelswitching signal and selecting a signal of a predetermined port may beused. For example, in the case of the repetition frequency of 60 Hz, thesignal processing unit 125 may judge port 1 to be selected (see FIG. 4).

In addition, only the used channel may be transmitted to the A/Dconverter 124 from the microcomputer 122 through the D/A converter 123.For example, in the case where the repetition frequency is set as 10 Hz,only the signal of channel 1 is transmitted and the signal of channel 2is not transmitted. In the case where the A/D converter 124 has theconfiguration shown in FIG. 4, the signal processing unit 125 judgeswhether or not the received signal is present in the port and when thesignal is in port 1 and no signal is in port 2, the signal processingunit 125 may select port 1, i.e., channel 1. In this case, since thechannel switching signal is not required, the configuration of FIG. 5may also be applied.

However, the etching may be continuously performed in plural steps andin the case where frequencies (other channels) of different frequencybands are used in the steps, the method (see FIG. 4) of selecting thechannel by the switching signal while transmitting signals of differentchannels periodically at all times at different transmission timings canchange the channel more quickly than the method in which the switchingsignal is not required. Therefore, the channel selection method shown inFIG. 4 is preferable.

Next, frequency resolutions of channel 1 and channel 2 in the embodimentwill be described.

In general, the frequency resolution is determined by processingcapacities of the D/A converter 123 and the A/D converter 124 and arange of frequency bands. The D/A converter 123 and the A/D converter124 of 12 bits may handle a signal of 4096 digits. The digit means thebinary digit number. In this case, values of 4096 types of signals canbe handled when the analog signal is in the range of ±10 V. Since 0 to10 V is generally used as the analog signal, values of 2048 types ofsignals can be handled. In the embodiment, since a use range of therepetition frequency of channel 1 is 1 to 119 Hz, resolution ofapproximately 0.058 Hz is made. Further, since a use range of therepetition frequency of channel 2 is 120 to 2000 Hz, resolution ofapproximately 0.92 Hz is made. In addition, in order to handle a signalof 2048 digits when the use range of the analog signal is 10 V, 1 digitis equivalent to approximately 4.9 mV. That is, in the case where theanalog signal is approximately 4.9 mV, the repetition frequency ofapproximately 0.058 Hz is represented in the channel 1 and therepetition frequency of approximately 0.92 Hz is represented in thechannel 2. As a result, when an error of 4.9 mV occurs in the analogsignal, an error of approximately 0.058 Hz occurs in the channel 1 andan error of approximately 0.92 Hz occurs in the channel 2.

For example, in the case where the duty ratio is 10% at the repetitionfrequency of 10 Hz (channel 1), the off time is 90 ms. In the case wherenoise of approximately 0.05% (5 mV) occurs in the analog signal, anerror of approximately 0.058 Hz or more occurs in the repetitionfrequency. In the case where the duty ratio is 10% at the repetitionfrequency of 10.058 Hz, the off time is 89.5 ms and the error isapproximately 0.56%. For example, in the case where the duty ratio is10% at the repetition frequency of 1000 Hz (channel 2), the off time is0.9 ms. When noise of approximately 0.05% (5 mV) occurs in the analogsignal due to the noise, the analog signal a is processed as a signal ofapproximately 1001 Hz, such that the off time is 0.899 ms and the erroris 0.001 ms, and an error is 0.001 ms, and an error of 0.1% merelyoccurs.

Therefore, in the embodiment, as described above, the use frequencyrange of the repetition frequency is divided into a frequency band inwhich the precision of the resolution is required and a frequency bandin which the precision of the resolution is not nearly required, suchthat the repetition frequency can be controlled with high precision in ahigh range of frequency band of the repetition frequency.

Further, in the embodiment, a setting unit of the repetition frequencyis 1 Hz, such that about 20 digits can be allocated per 1 Hz and theerror due to noise can be excluded when the frequency band of channel 1is selected.

Further, since the resolution of channel 1 is 0.058 Hz, the setting unitof the repetition frequency of channel 1 can be controlled to 1 Hz orless.

In addition, in the embodiment, the frequency band of the repetitionfrequency is divided into two, but may be divided into two or morefrequency bands. As the division number increases, the resolution ofeach frequency band can be improved.

Further, in the embodiment, the frequency band of the repetitionfrequency is divided into two, but the use frequency range of therepetition frequency may be widened by combining two or more differentfrequency bands as shown in FIG. 6. As described above, the usefrequency range of the repetition frequency is widened by combiningdifferent frequency bands, thereby improving the precision of eachfrequency band.

In addition, when the on time of the temporally modulated intermittentradio-frequency bias power is short, it is difficult to match theradio-frequency bias power. The on time is defined by the duty ratio andthe repetition frequency, but when the duty ratio is a low duty ratiosuch as 20% or less, the on time in the repetition frequency of theradio-frequency band of channel 2 is short, such that theradio-frequency bias power may not be applied to the sample mountingelectrode 111. As a result, when the repetition frequency of thefrequency band of channel 2 is used, the duty ratio of 20% or more ispreferably used.

Next, a plasma processing method in which the microwave ECR plasmaetching apparatus according to the embodiment is used and the wafer 112is etched will be described.

Further, a plasma processing method in the case where the use frequencyrange of the repetition frequency of the temporally modulatedintermittent radio-frequency bias is divided into two frequency bands tobe configured by two frequency bands of channel 1 (1 to 119 Hz) andchannel 2 (120 to 2000 Hz) will be described.

Although the temporally modulated intermittent radio-frequency bias maybe used to control the concentration of the reaction product and controletching performance, a large effect can be obtained when the off time isthe same as the stay time of the reaction product. During the on time ofthe temporally modulated intermittent radio-frequency bias, etching isperformed and the reaction production is continuously generated. Whenthe temporally modulated intermittent radio-frequency bias is off,etching is not performed and the reaction production is exhausted. In ageneral plasma etching apparatus, the stay time of the reaction productis in the range of 10 to 1000 ms under the processing pressure in therange of 0.1 to 10 Pa. As one example, a case in which the stay time ofthe reaction product is 80 ms will be described. In continuousradio-frequency bias, the concentration of the reaction productincreases monotonically from the time when etching starts. Dependence ofthe reaction product on an etching time is shown in FIG. 7A, when thestay time of the reaction product is 80 ms, the on time of thetemporally modulated intermittent radio-frequency bias is 10 ms, and theoff time is 10 ms. When the off time is shorter than the stay time ofthe reaction product, the concentration of the reaction productincreases as time elapsed because the reaction product remains. Next,when the stay time of the reaction product is 80 ms, the on time of thetemporally modulated intermittent radio-frequency bias is 10 ms, the offtime of the temporally modulated intermittent radio-frequency bias is 80ms, in the case where the stay time of the reaction product isequivalent to the off time, the dependence of the reaction product onthe etching time is shown in FIG. 7B. The reaction product generatedduring the on time is exhausted at the off time and thus does notremain, the concentration of the reaction product may be low. By settingthe off time longer than the stay time of the reaction product, theconcentration of the reaction product may decrease.

Next, dependence of a taper angle of an etching shape of a line on therepetition frequency when the duty ratio is fixed to 20% and a line of asilicon nitride layer is etched is shown in FIG. 8A. As the repetitionfrequency decreases, the etching shape is close to be vertical. Althoughthe off time is established by the repetition frequency and the dutyratio, in the result of FIG. 8A, the off time increases, such that theconcentration of the reaction product decreases and attachment of thereaction product decreases. FIG. 8A shows the dependence of the taperangle on the repetition frequency and FIG. 8B shows dependence of thetaper angle on the off time, but the taper angle can be controlled byincreasing the off time as compared with FIG. 8B. In particular, whenthe off time is in the range of 10 to 1000 ms, the vertical etchingshape can be acquired.

As described above, by setting the off time longer than the stay time ofthe reaction product, the concentration of the reaction product maydecrease. In order to increase the off time, the repetition frequencyshould decrease and the duty ratio should decrease. For example, FIG. 7Bshows an example in which the wafer 112 is plasma-etched by applying, tothe sample mounting electrode 111, the temporally modulated intermittentradio-frequency bias power in which the repetition frequency is 11.1 Hzand the duty ratio 11.1%.

Accordingly, in the embodiment, even in a low-frequency repetitionfrequency band to increase the off time, the frequency can be controlledwith high precision, and as a result, the concentration of the reactionproduct can be controlled with high precision. Therefore, the etchingshape can be controlled with high precision.

Further, a radio-frequency repetition frequency band may need to be useddepending on a type of an etched film or a target etching process, anetching condition, and the like. However, since the on time and the offtime in the radio-frequency repetition frequency are very short, thefrequency resolution may not mostly be higher than that of thelow-frequency repetition frequency.

In addition, the etching process is various and in some processes, notvertical processing but a taper shape may be needed. As one example, ashallow trench isolation (hereinafter, referred to as ‘STI’) is etched.After STI etching, the taper shape is, as a whole, required forimplantation. When the etching shape is processed in the taper shape, inthe case where an etching characteristic shown in FIG. 8A is provided,the repetition frequency is preferably high. As described above, inorder to widely apply to various processes of semiconductor manufacture,the repetition frequency can be preferably used extensively.

Moreover, in the plasma processing method, the use frequency range ofthe repetition frequency of the temporally modulated intermittentradio-frequency bias is divided into two frequency bands, but the sameeffect as the plasma processing method can be obtained even when the usefrequency range of the repetition frequency is divided into two or morefrequency bands. In addition, even when the use frequency range of therepetition frequency is configured by combination of two or moredifferent frequency bands, the same effect as the plasma processingmethod can be obtained.

According to the embodiment of the present invention, in order toestablish the above-mentioned configuration, high-precision etching canbe performed in various etching processes so as to supply the temporallymodulated intermittent radio-frequency bias power of the repetitionfrequency controlled with high precision in the wide frequency band tothe mounting electrode.

Further, in the embodiment, plural channels of the frequency band of therepetition frequency are switched by the channel switching signal, but amethod of using plural radio-frequency bias power may be used. Forexample, as shown in FIG. 9, in the case of two channels, tworadio-frequency power supplies outputting the temporally modulatedintermittent radio-frequency bias power are installed in each of twochannels and a first radio-frequency power supply 127 and a secondradio-frequency power supply 128 are switched by a radio-frequency powersupply selection signal, such that the temporally modulated intermittentradio-frequency bias power of the repetition frequency controlled withhigh precision in the wide frequency band can be supplied to themounting electrode. Further, as shown in FIG. 10, instead of the pluralradio-frequency power supplies, plural pulse generators (a first pulsegenerator 129 and a second pulse generator 130) generating pulsewaveforms of repetition frequencies of different frequency bands may beformed in the radio-frequency bias power supply.

The configuration of the radio-frequency bias power supply of theembodiment may be applied even to the radio-frequency power supplygenerating plasma. As a result, in the plasma processing apparatusaccording to the embodiment of the present invention, the temporallymodulated intermittent radio-frequency power which can be controlledwith high precision in the wide repetition frequency band is suppliedfrom at least one power supply of the radio-frequency power supplygenerating plasma and the radio-frequency bias power supply.

Further, in the embodiment, the microwave ECR plasma has bee describedas an embodiment, but the same effect as the embodiment can be obtainedeven in plasma processing apparatuses using other plasma generationmethods such as capacitive-coupled plasma or inductive-coupled plasma.

1. A plasma processing apparatus, comprising: a vacuum vessel; a firstradio-frequency power supply for generating plasma in the vacuum vessel;a stage installed in the vacuum vessel and mounted with a sample; and asecond radio-frequency power supply applying voltage to the stage,wherein at least one of the first and second radio-frequency powersupplies supplies temporally modulated intermittent radio-frequencypower, has two or more different frequency bands, and temporallymodulates the radio-frequency power by a repetition frequency which hasthe same range of analog signals used in each of the frequency band. 2.The plasma processing apparatus according to claim 1, wherein: at leastone of the first and second radio-frequency power supplies includes anA/D converter and a pulse generator, the A/D converter receives the twoor more different frequency bands at different timings, and the pulsegenerator generates a pulse of a frequency band selected by a frequencyband switching signal from each of the two or more different frequencybands received by the A/D converter.
 3. The plasma processing apparatusaccording to claim 1, wherein at least one of the first and secondradio-frequency power supplies includes radio-frequency power suppliesas many as the two or more different frequency bands.
 4. A plasmaprocessing apparatus, comprising: a vacuum vessel; a plasma generatingsection plasma in the vacuum vessel; a stage installed in the vacuumvessel and mounted with a sample; and a radio-frequency power supplyapplying temporally modulated intermittent radio-frequency power to thestage, wherein the radio-frequency power supply has two or moredifferent frequency bands and temporally modulates the radio-frequencypower by a repetition frequency which has the same range of analogsignals used in each of the frequency band.
 5. The plasma processingapparatus according to claim 4, wherein: the radio-frequency powersupply includes an A/D converter and a pulse generator, the A/Dconverter receives the two or more different frequency bands atdifferent timings, and the pulse generator generates a pulse of afrequency band selected by a frequency band switching signal from eachof the two or more different frequency bands received by the A/Dconverter.
 6. The plasma processing apparatus according to claim 4,wherein the radio-frequency power supply includes radio-frequency powersupplies as many as the two or more different frequency bands.
 7. Aplasma processing method using a plasma processing apparatus including avacuum vessel, a plasma generating section plasma in the vacuum vessel,a stage installed in the vacuum vessel and mounted with a sample, and aradio-frequency power supply applying temporally modulated intermittentradio-frequency power to the stage, wherein: the radio-frequency powersupply has two or more different frequency bands and temporallymodulates the radio-frequency power by a repetition frequency which hasthe same range of analog signals used in each of the frequency band, andthe sample is etched while applying the temporally modulatedintermittent radio-frequency power at any one frequency of the frequencybands.
 8. The plasma processing method according to claim 7, wherein aperiod, in which the temporally modulated intermittent radio-frequencypower is not applied, is in the range of 10 to 1000 ms.
 9. The plasmaprocessing method according to claim 8, wherein the period, in which thetemporally modulated intermittent radio-frequency power is not applied,is a stay time of a reaction product or more.